000			01722dam a2200253Ia 4500
001			0000064089
003			0001
008			140506s2013 si af b 001 0 eng
020			_a9789814316071
020			_a9814316075
040			_aSINUS _cSINUS _dOCLCO _dIXA _dNhCcYBP
082	0	4	_a621.31 244 _223
084			_a621.31244 _bDHA-A
100	1		_aDharmadasa, I. M.
245	1	0	_aAdvances in thin-film solar cells _h[Book] / _cI.M. Dharmadasa.
260			_aSingapore : _bPan Stanford Pub., _cc2013.
300			_axvi, 225 p., 6 p. of plates : _bill. (some col.) ; _c24 cm.
504			_aIncludes bibliographical references and index.
520			_aThis book concentrates on the latest developments in our understanding of solid-state device physics. The material presented is mainly experimental and based on CdTe thin-film solar cells. It extends these new findings to CIGS thin-film solar cells and presents a new device design based on graded bandgap multilayer solar cells. This design has been experimentally tested using the well-researched GaAs/AlGaAs system and initial devices have shown impressive device parameters. These devices are capable of absorbing all radiation (UV, visible, and infra-red) within the solar spectrum and combines "impact ionization" and "impurity photovoltaic" effects. The improved device understanding presented in this book should impact and guide future device design and low-cost thin-film solar panel manufacture.
650		0	_aSolar cells _xMaterials.
650		0	_aThin films.
650		0	_aThin film devices.
852			_p47459 _915884.76 _vRising Sun Educational Service _dBooks
999			_c18376 _d18376