| 000 | 00893pam a2200265 a 4500 | ||
|---|---|---|---|
| 001 | 0000046704 | ||
| 003 | 0001 | ||
| 008 | 901113s1989 nyua b 00110 eng | ||
| 020 | _a288124338X | ||
| 035 | _a0699-27560 | ||
| 040 |
_aDLC _cDLC |
||
| 082 | _a621.381528 | ||
| 084 |
_a621.381528 _bABE-S |
||
| 100 | 1 | _aAbe, Masayuki. | |
| 245 | 1 | 0 |
_aSemiconductor heterostructure devices _h[Book] / _c[by Masayuki Abe, Naoki Yokoyama]. |
| 260 |
_aNew York : _bGordon and Breach Science Publishers, _cc1989. |
||
| 300 |
_axii, 96 p. : _bill. ; _c22 cm. |
||
| 490 | 1 |
_aJapanese technology reviews, _x0898-5693 ; _vvol. 8. _aElectronics. |
|
| 500 | _aIndex includes | ||
| 521 | _aAll. | ||
| 650 | 0 | _aField-effect transistors. | |
| 650 | 0 | _aBipolar transistors. | |
| 700 | 1 | 0 | _aYokoyama, Naoki. |
| 852 |
_p24835 _90.00 _dBooks |
||
| 999 |
_c159064 _d159064 |
||